![]() Most of the remaining electrons are swept across the very thin base region and contribute to the collector current. Since the emitter region is very heavily doped, many more electrons enter the base region than holes, and some of the electrons recombine with holes. As a result, these holes attract electrons from the emitter into the base region across the forward-biased base-emitter junction. When the base-emitter junction is forward-biased, a small current flows into the base, injecting holes into the p-doped base region. In other words, the base-emitter junction is forward-biased whereas the base-collector junction is reverse-biased. Let’s consider the npn transistor where the collector potential is higher than the emitter potential and the base potential is roughly 0.7 V higher than the emitter potential. When each terminal is at the specified voltage, the collector draws a current that is h FE times higher than the current applied to the base. In this way, a bipolar transistor is formed by two back-to-back diodes. To obtain a high current gain, the emitter region is orders of magnitude more heavily doped than the base region. The base region shares two pn junctions, each with collector and emitter. A bipolar transistor (bipolar junction transistor: BJT) consists of the collector, base, and emitter regions, with the very thin base region located between the collector and emitter regions. ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |